Gleskova, Helena and Wagner, S. (1995) Unified rate law for the thermal and light-induced annealing of defects in a-Si:H. In: 22nd International conference on physics of semiconductors. World Scientific, Singapore, pp. 2701-2704. ISBN 9810220219
Full text not available in this repository. (Request a copy from the Strathclyde author)Abstract
This chapter looks at unified rate law for the thermal and light-induced annealing of defects in a-Si:H
| Item type: | Book Section |
|---|---|
| ID code: | 33439 |
| Keywords: | unified rate law, thermal, light-induced annealing , defects, a-Si:H, Electrical engineering. Electronics Nuclear engineering |
| Subjects: | Technology > Electrical engineering. Electronics Nuclear engineering |
| Department: | Faculty of Engineering > Electronic and Electrical Engineering |
| Related URLs: | |
| Depositing user: | Pure Administrator |
| Date Deposited: | 20 Jan 2012 09:48 |
| Last modified: | 04 Oct 2012 16:33 |
| URI: | http://strathprints.strath.ac.uk/id/eprint/33439 |
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