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Unified rate law for the thermal and light-induced annealing of defects in a-Si:H

Gleskova, Helena and Wagner, S. (1995) Unified rate law for the thermal and light-induced annealing of defects in a-Si:H. In: 22nd International conference on physics of semiconductors. World Scientific, Singapore, pp. 2701-2704. ISBN 9810220219

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Abstract

This chapter looks at unified rate law for the thermal and light-induced annealing of defects in a-Si:H

Item type: Book Section
ID code: 33439
Keywords: unified rate law, thermal, light-induced annealing , defects, a-Si:H, Electrical engineering. Electronics Nuclear engineering
Subjects: Technology > Electrical engineering. Electronics Nuclear engineering
Department: Faculty of Engineering > Electronic and Electrical Engineering
Related URLs:
    Depositing user: Pure Administrator
    Date Deposited: 20 Jan 2012 09:48
    Last modified: 06 Sep 2014 07:14
    URI: http://strathprints.strath.ac.uk/id/eprint/33439

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