Gleskova, Helena and Wagner, S. (1995) Is thermal and light-induced annealing of metastable defects in a-Si:H driven by electrons? In: Amorphous silicon technology - 1995. MRS Symposium Proceedings, 377 . Materials Research Society, Warrendale, PA, pp. 343-348. ISBN 9781558992801
Full text not available in this repository. (Request a copy from the Strathclyde author)Abstract
This chapter looks at whether thermal and light-induced annealing of metastable defects in a-Si:H driven by electrons
| Item type: | Book Section |
|---|---|
| ID code: | 33437 |
| Keywords: | thermal, light-induced annealing , metastable defects, Electrical engineering. Electronics Nuclear engineering |
| Subjects: | Technology > Electrical engineering. Electronics Nuclear engineering |
| Department: | Faculty of Engineering > Electronic and Electrical Engineering |
| Related URLs: | |
| Depositing user: | Pure Administrator |
| Date Deposited: | 04 Nov 2011 16:06 |
| Last modified: | 04 Oct 2012 16:33 |
| URI: | http://strathprints.strath.ac.uk/id/eprint/33437 |
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