Strathprints Home | Open Access | Browse | Search | User area | Copyright | Help | Library Home | SUPrimo

Is thermal and light-induced annealing of metastable defects in a-Si:H driven by electrons?

Gleskova, Helena and Wagner, S. (1995) Is thermal and light-induced annealing of metastable defects in a-Si:H driven by electrons? [Proceedings Paper]

Full text not available in this repository. (Request a copy from the Strathclyde author)

Abstract

This chapter looks at whether thermal and light-induced annealing of metastable defects in a-Si:H driven by electrons

Item type: Proceedings Paper
ID code: 33437
Keywords: thermal, light-induced annealing , metastable defects, Electrical engineering. Electronics Nuclear engineering
Subjects: Technology > Electrical engineering. Electronics Nuclear engineering
Department: Faculty of Engineering > Electronic and Electrical Engineering
Related URLs:
    Depositing user: Pure Administrator
    Date Deposited: 04 Nov 2011 16:06
    Last modified: 17 Jul 2013 13:52
    URI: http://strathprints.strath.ac.uk/id/eprint/33437

    Actions (login required)

    View Item