Nakata, J. and Wagner, S. and Gleskova, Helena and Stolk, P. A. and Poate, J. M. (1996) Recovery kinetics of phosphorus ion-implanted a-Si:H. In: Amorphous silicon technology - 1996. MRS Symposium Proceedings, 420 . Materials Research Society, Warrendale, PA, pp. 653-658. ISBN 9781558993235
Full text not available in this repository. (Request a copy from the Strathclyde author)Abstract
This chapter looks at recovery kinetics of phosphorus ion-implanted a-Si:H
| Item type: | Book Section |
|---|---|
| ID code: | 33436 |
| Keywords: | recovery kinetics, phosphorus, ion-implanted, Electrical engineering. Electronics Nuclear engineering |
| Subjects: | Technology > Electrical engineering. Electronics Nuclear engineering |
| Department: | Faculty of Engineering > Electronic and Electrical Engineering |
| Related URLs: | |
| Depositing user: | Pure Administrator |
| Date Deposited: | 04 Nov 2011 16:02 |
| Last modified: | 04 Oct 2012 16:33 |
| URI: | http://strathprints.strath.ac.uk/id/eprint/33436 |
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