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Recovery kinetics of phosphorus ion-implanted a-Si:H

Nakata, J. and Wagner, S. and Gleskova, Helena and Stolk, P. A. and Poate, J. M. (1996) Recovery kinetics of phosphorus ion-implanted a-Si:H. [Proceedings Paper]

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Abstract

This chapter looks at recovery kinetics of phosphorus ion-implanted a-Si:H

Item type: Proceedings Paper
ID code: 33436
Keywords: recovery kinetics, phosphorus, ion-implanted, Electrical engineering. Electronics Nuclear engineering
Subjects: Technology > Electrical engineering. Electronics Nuclear engineering
Department: Faculty of Engineering > Electronic and Electrical Engineering
Related URLs:
    Depositing user: Pure Administrator
    Date Deposited: 04 Nov 2011 16:02
    Last modified: 17 Jul 2013 13:52
    URI: http://strathprints.strath.ac.uk/id/eprint/33436

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