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a-Si:H TFTs made on polyimide foil by PECVD at 150ºC

Gleskova, Helena and Wagner, S. and Suo, Z. (1998) a-Si:H TFTs made on polyimide foil by PECVD at 150ºC. [Proceedings Paper]

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Abstract

This chapter looks at a-Si:H TFTs made on polyimide foil by PECVD at 150ºC

Item type: Proceedings Paper
ID code: 33433
Keywords: a-Si:H TFT, polyimide foil, pecvd, 150-degrees-C, Electrical engineering. Electronics Nuclear engineering
Subjects: Technology > Electrical engineering. Electronics Nuclear engineering
Department: Faculty of Engineering > Electronic and Electrical Engineering
Related URLs:
    Depositing user: Pure Administrator
    Date Deposited: 04 Nov 2011 15:12
    Last modified: 17 Jul 2013 13:52
    URI: http://strathprints.strath.ac.uk/id/eprint/33433

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