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The Au/SiOx/a-Si:H structures with very thin anodic oxide layers

Skryshevsky, V. A. and Strikha, V. I. and Gleskova, Helena (1992) The Au/SiOx/a-Si:H structures with very thin anodic oxide layers. Czechoslovak Journal of Physics, 42 (3). pp. 331-338. ISSN 0011-4626

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Abstract

Creation of a high-quality dielectric layer during the formation of the MIS struc- tures on a-Si:H poses some problems. The thermic oxide, usually used in the MOSFET technology on c-Si, is inconvenient for a-Si:H because of degradation of the a-Si:tt films owing to effusion of hydrogen deal with some successful employment of the anodic oxidation for the preparation of MIS position-sensitive detectors and for the passivation of large-area solar cells. The present paper describes the influence of the thickness of dielectric layer prepared by the anodic oxidation on t h e I - V characteristics and optical prope r t i e s of MIS structures, of Au-SiO~-a-Si:H type .

Item type: Article
ID code: 33425
Keywords: anodic oxide layers , solar cells, anodic oxidation , Electrical engineering. Electronics Nuclear engineering, Physics and Astronomy(all)
Subjects: Technology > Electrical engineering. Electronics Nuclear engineering
Department: Faculty of Engineering > Electronic and Electrical Engineering
Related URLs:
    Depositing user: Pure Administrator
    Date Deposited: 13 Oct 2011 15:06
    Last modified: 05 Sep 2014 10:49
    URI: http://strathprints.strath.ac.uk/id/eprint/33425

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