Skryshevsky, V. A. and Strikha, V. I. and Gleskova, Helena (1992) The Au/SiOx/a-Si:H structures with very thin anodic oxide layers. Czechoslovak Journal of Physics, 42 (3). pp. 331-338. ISSN 0011-4626
Full text not available in this repository. (Request a copy from the Strathclyde author)Abstract
Creation of a high-quality dielectric layer during the formation of the MIS struc- tures on a-Si:H poses some problems. The thermic oxide, usually used in the MOSFET technology on c-Si, is inconvenient for a-Si:H because of degradation of the a-Si:tt films owing to effusion of hydrogen deal with some successful employment of the anodic oxidation for the preparation of MIS position-sensitive detectors and for the passivation of large-area solar cells. The present paper describes the influence of the thickness of dielectric layer prepared by the anodic oxidation on t h e I - V characteristics and optical prope r t i e s of MIS structures, of Au-SiO~-a-Si:H type .
| Item type: | Article |
|---|---|
| ID code: | 33425 |
| Keywords: | anodic oxide layers , solar cells, anodic oxidation , Electrical engineering. Electronics Nuclear engineering |
| Subjects: | Technology > Electrical engineering. Electronics Nuclear engineering |
| Department: | Faculty of Engineering > Electronic and Electrical Engineering |
| Related URLs: | |
| Depositing user: | Pure Administrator |
| Date Deposited: | 13 Oct 2011 15:06 |
| Last modified: | 04 Oct 2012 13:52 |
| URI: | http://strathprints.strath.ac.uk/id/eprint/33425 |
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