Skryshevsky, V. A. and Strikha, V. I. and Gleskova, Helena (1992) The Au/SiOx/a-Si:H structures with very thin anodic oxide layers. Czechoslovak Journal of Physics, 42 (3). pp. 331-338. ISSN 0011-4626Full text not available in this repository. (Request a copy from the Strathclyde author)
Creation of a high-quality dielectric layer during the formation of the MIS struc- tures on a-Si:H poses some problems. The thermic oxide, usually used in the MOSFET technology on c-Si, is inconvenient for a-Si:H because of degradation of the a-Si:tt films owing to effusion of hydrogen deal with some successful employment of the anodic oxidation for the preparation of MIS position-sensitive detectors and for the passivation of large-area solar cells. The present paper describes the influence of the thickness of dielectric layer prepared by the anodic oxidation on t h e I - V characteristics and optical prope r t i e s of MIS structures, of Au-SiO~-a-Si:H type .
|Keywords:||anodic oxide layers , solar cells, anodic oxidation , Electrical engineering. Electronics Nuclear engineering, Physics and Astronomy(all)|
|Subjects:||Technology > Electrical engineering. Electronics Nuclear engineering|
|Department:||Faculty of Engineering > Electronic and Electrical Engineering|
|Depositing user:||Pure Administrator|
|Date Deposited:||13 Oct 2011 14:06|
|Last modified:||04 May 2016 19:33|