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Reversibility of the light-induced saturation and annealing of defects in a-Si:H

Gleskova, Helena and Morin, P. A. and Bullock, J. N. and Wagner, S. (1992) Reversibility of the light-induced saturation and annealing of defects in a-Si:H. Materials Letters, 13 (4-5). pp. 279-283. ISSN 0167-577X

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Abstract

Results on the reversibility of the light-induced saturation and dark- and light-annealing of the deep-level defects in a-S:H films are presented. The value of the saturated defect density (Nsat) in three samples obtained after initial light-soaking was observed to decrease upon cyclic light-annealing and saturation. This drop in Nsat was observed in two samples after the second illumination while in another sample the drop was observed only after a series of experiments carried out to determine the temperature dependence of Nsat

Item type: Article
ID code: 33424
Keywords: light-induced saturation , annealing , saturated defect density, Electrical engineering. Electronics Nuclear engineering, Mechanics of Materials, Materials Science(all), Mechanical Engineering, Condensed Matter Physics
Subjects: Technology > Electrical engineering. Electronics Nuclear engineering
Department: Faculty of Engineering > Electronic and Electrical Engineering
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Depositing user: Pure Administrator
Date Deposited: 13 Oct 2011 14:55
Last modified: 05 Sep 2014 10:49
URI: http://strathprints.strath.ac.uk/id/eprint/33424

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