Strathprints Home | Open Access | Browse | Search | User area | Copyright | Help | Library Home | SUPrimo

Kinetics of recovery of the light-induced defects in hydrogenated amorphous silicon under illumination

Gleskova, Helena and Morin, P. A. and Wagner, S. (1993) Kinetics of recovery of the light-induced defects in hydrogenated amorphous silicon under illumination. Applied Physics Letters, 62 (17). pp. 2063-2065. ISSN 0003-6951

Full text not available in this repository. (Request a copy from the Strathclyde author)

Abstract

The results of a study of the kinetics of the light‐induced annealing of defects in hydrogenated amorphous silicon (a‐Si:H) are presented. Our results show that at temperatures between 92 and 152 °C illumination increases the rate of annealing compared to annealing in the dark. The rates of annealing in the dark and under illumination exhibit the same functional dependence on the defect density. This observation suggests that the mechanisms for ‘‘dark’’ and ‘‘light’’ annealing are identical.

Item type: Article
ID code: 33421
Keywords: amorphous state, annealing , hydrogen additions, kinetics, Electrical engineering. Electronics Nuclear engineering
Subjects: Technology > Electrical engineering. Electronics Nuclear engineering
Department: Faculty of Engineering > Electronic and Electrical Engineering
Related URLs:
    Depositing user: Pure Administrator
    Date Deposited: 13 Oct 2011 14:41
    Last modified: 04 Oct 2012 13:52
    URI: http://strathprints.strath.ac.uk/id/eprint/33421

    Actions (login required)

    View Item