Gleskova, Helena and Bullock, J. N. and Wagner, S. (1993) Isolating the rate of light-induced annealing of the dangling-bond defects in a-Si:H. Journal of Non-crystalline Solids, 164-166. pp. 183-186. ISSN 0022-3093
Full text not available in this repository. (Request a copy from the Strathclyde author)Official URL: http://dx.doi.org/10.1016/0022-3093(93)90521-X
Abstract
The results of a study of the kinetics of the light-induced annealing of defects in hydrogenated amorphous silicon (a-Si:H) at the temperature of 125°C are presented. The rate of removal of the metastable defects and the final steady-state defect density both increase with light intensity. The functional dependence of the light-induced annealing term on the light intensity, or carrier generation rate G, is proportional to G0.66−0.84, and thus is proportional to the density of the photo-generated carriers.
| Item type: | Article |
|---|---|
| ID code: | 33420 |
| Keywords: | non-crystalline solids, light-induced annealing , annealing, metastable defects, Electrical engineering. Electronics Nuclear engineering |
| Subjects: | Technology > Electrical engineering. Electronics Nuclear engineering |
| Department: | Faculty of Engineering > Electronic and Electrical Engineering |
| Related URLs: | |
| Depositing user: | Pure Administrator |
| Date Deposited: | 13 Oct 2011 14:38 |
| Last modified: | 04 Oct 2012 13:52 |
| URI: | http://strathprints.strath.ac.uk/id/eprint/33420 |
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