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Isolating the rate of light-induced annealing of the dangling-bond defects in a-Si:H

Gleskova, H. and Bullock, J. N. and Wagner, S. (1993) Isolating the rate of light-induced annealing of the dangling-bond defects in a-Si:H. Journal of Non-Crystalline Solids, 164-166 (PART 1). pp. 183-186. ISSN 0022-3093

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Abstract

The results of a study of the kinetics of the light-induced annealing of defects in hydrogenated amorphous silicon (a-Si:H) at the temperature of 125°C are presented. The rate of removal of the metastable defects and the final steady-state defect density both increase with light intensity. The functional dependence of the light-induced annealing term on the light intensity, or carrier generation rate G, is proportional to G0.66−0.84, and thus is proportional to the density of the photo-generated carriers.

Item type: Article
ID code: 33420
Keywords: non-crystalline solids, light-induced annealing , annealing, metastable defects, Electrical engineering. Electronics Nuclear engineering, Materials Chemistry, Ceramics and Composites, Electronic, Optical and Magnetic Materials, Condensed Matter Physics
Subjects: Technology > Electrical engineering. Electronics Nuclear engineering
Department: Faculty of Engineering > Electronic and Electrical Engineering
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Depositing user: Pure Administrator
Date Deposited: 13 Oct 2011 14:38
Last modified: 07 May 2014 10:04
URI: http://strathprints.strath.ac.uk/id/eprint/33420

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