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Electrophotographic patterning of thin-film silicon on glass foil

Gleskova, H. and Wagner, S. and Shen, D. S. (1995) Electrophotographic patterning of thin-film silicon on glass foil. IEEE Electron Device Letters, 16 (10). pp. 418-420.

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Abstract

We report the patterning of thin films of amorphous silicon (a-Si:H) using electrophotographically applied toner as the etch mask. Using a conventional xerographic copier, a toner pattern was applied to 0.1 μm thick a-Si:H films deposited on approx.50 μm thick glass foil. The toner then served as the etch mask for a-Si:H, and as the lift-off material for the patterning of chromium. This technique opens the prospect of roll-to-roll, high-throughput patterning of large-area thin-film circuits on glass substrates.

Item type: Article
ID code: 33419
Keywords: electrophotographic patterning , thin-film silicon, Electrical engineering. Electronics Nuclear engineering, Electronic, Optical and Magnetic Materials, Electrical and Electronic Engineering
Subjects: Technology > Electrical engineering. Electronics Nuclear engineering
Department: Faculty of Engineering > Electronic and Electrical Engineering
Related URLs:
Depositing user: Pure Administrator
Date Deposited: 13 Oct 2011 14:35
Last modified: 07 May 2014 09:56
URI: http://strathprints.strath.ac.uk/id/eprint/33419

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