Gleskova, Helena and Wagner, S. and Shen, D. (1995) Electrophotographic patterning of thin-film silicon on glass foil. IEEE Electron Device Letters, 16 (10). pp. 418-420.
Full text not available in this repository. (Request a copy from the Strathclyde author)Official URL: http://dx.doi.org/10.1109/55.464803
Abstract
We report the patterning of thin films of amorphous silicon (a-Si:H) using electrophotographically applied toner as the etch mask. Using a conventional xerographic copier, a toner pattern was applied to 0.1 μm thick a-Si:H films deposited on ~50 μm thick glass foil. The toner then served as the etch mask for a-Si:H, and as the lift-off material for the patterning of chromium. This technique opens the prospect of roll-to-roll, high-throughput patterning of large-area thin-film circuits on glass substrates.
| Item type: | Article |
|---|---|
| ID code: | 33419 |
| Keywords: | electrophotographic patterning , thin-film silicon, Electrical engineering. Electronics Nuclear engineering |
| Subjects: | Technology > Electrical engineering. Electronics Nuclear engineering |
| Department: | Faculty of Engineering > Electronic and Electrical Engineering |
| Related URLs: | |
| Depositing user: | Pure Administrator |
| Date Deposited: | 13 Oct 2011 14:35 |
| Last modified: | 04 Oct 2012 13:52 |
| URI: | http://strathprints.strath.ac.uk/id/eprint/33419 |
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