Gleskova, H. and Wagner, S. and Shen, D. S. (1995) Electrophotographic patterning of thin-film silicon on glass foil. IEEE Electron Device Letters, 16 (10). pp. 418-420.Full text not available in this repository. (Request a copy from the Strathclyde author)
We report the patterning of thin films of amorphous silicon (a-Si:H) using electrophotographically applied toner as the etch mask. Using a conventional xerographic copier, a toner pattern was applied to 0.1 μm thick a-Si:H films deposited on approx.50 μm thick glass foil. The toner then served as the etch mask for a-Si:H, and as the lift-off material for the patterning of chromium. This technique opens the prospect of roll-to-roll, high-throughput patterning of large-area thin-film circuits on glass substrates.
|Keywords:||electrophotographic patterning , thin-film silicon, Electrical engineering. Electronics Nuclear engineering, Electronic, Optical and Magnetic Materials, Electrical and Electronic Engineering|
|Subjects:||Technology > Electrical engineering. Electronics Nuclear engineering|
|Department:||Faculty of Engineering > Electronic and Electrical Engineering|
|Depositing user:||Pure Administrator|
|Date Deposited:||13 Oct 2011 13:35|
|Last modified:||22 Mar 2017 11:36|