Gleskova, H. and Könenkamp, R. and Wagner, S. and Shen, D. S. (1996) Electrophotographically patterned thin-film silicon transistors. IEEE Electron Device Letters, 17 (6). pp. 264-266.Full text not available in this repository. (Request a copy from the Strathclyde author)
The authors made amorphous silicon thin-film transistors on glass foil using exclusively electrophotographic printing for pattern formation, contact hole opening, and device isolation. Toner masks were applied by feeding the glass substrate through a photocopier, or from laser-printed patterns on transfer paper. This all-printed patterning is an important step toward demonstrating a low-cost large-area circuit processing technology.
|Keywords:||thin-film silicon transistors , silicon transistors , electrophotographic printing, Electrical engineering. Electronics Nuclear engineering, Electronic, Optical and Magnetic Materials, Electrical and Electronic Engineering|
|Subjects:||Technology > Electrical engineering. Electronics Nuclear engineering|
|Department:||Faculty of Engineering > Electronic and Electrical Engineering|
|Depositing user:||Pure Administrator|
|Date Deposited:||13 Oct 2011 13:31|
|Last modified:||27 Apr 2016 17:15|