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Electrophotographically patterned thin-film silicon transistors

Gleskova, H. and Könenkamp, R. and Wagner, S. and Shen, D. S. (1996) Electrophotographically patterned thin-film silicon transistors. IEEE Electron Device Letters, 17 (6). pp. 264-266.

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Abstract

The authors made amorphous silicon thin-film transistors on glass foil using exclusively electrophotographic printing for pattern formation, contact hole opening, and device isolation. Toner masks were applied by feeding the glass substrate through a photocopier, or from laser-printed patterns on transfer paper. This all-printed patterning is an important step toward demonstrating a low-cost large-area circuit processing technology.

Item type: Article
ID code: 33417
Keywords: thin-film silicon transistors , silicon transistors , electrophotographic printing, Electrical engineering. Electronics Nuclear engineering, Electronic, Optical and Magnetic Materials, Electrical and Electronic Engineering
Subjects: Technology > Electrical engineering. Electronics Nuclear engineering
Department: Faculty of Engineering > Electronic and Electrical Engineering
Related URLs:
Depositing user: Pure Administrator
Date Deposited: 13 Oct 2011 14:31
Last modified: 07 May 2014 09:58
URI: http://strathprints.strath.ac.uk/id/eprint/33417

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