Wagner, S. and Gleskova, Helena and Nakata, J. (1996) Equilibration and stability in undoped amorphous silicon. Journal of Non-Crystalline Solids, 198-200. pp. 407-414. ISSN 0022-3093Full text not available in this repository. (Request a copy from the Strathclyde author)
The annealing of structure and defect density in silicon-implanted non-hydrogenated and hydrogenated amorphous silicon, a-Si and a-Si:H, is compared. In both materials, the annealing follows equilibrium-like trajectories of defect density versus Urbach energy. A comparison of implanted, as-grown, and light-soaked a-Si:H shows that these three materials are strained on an intermediate, extended, and local scale, respectively. Similar defect annealing rates in ion-implanted and light-soaked a-Si:H point to the same mechanism for relaxation, which most likely is associated with the diffusion of an atom or defect. Hydrogen is the most likely candidate, but more quantitative verification is needed.
|Keywords:||amorphous silicon , equilibration, non-crystalline solids, Electrical engineering. Electronics Nuclear engineering, Materials Chemistry, Ceramics and Composites, Electronic, Optical and Magnetic Materials, Condensed Matter Physics|
|Subjects:||Technology > Electrical engineering. Electronics Nuclear engineering|
|Department:||Faculty of Engineering > Electronic and Electrical Engineering|
|Depositing user:||Pure Administrator|
|Date Deposited:||13 Oct 2011 13:29|
|Last modified:||27 Apr 2016 17:15|