Branz, H. M. and Bullock, J. N. and Asher, S. and Gleskova, Helena and Wagner, S. (1996) On the lack of observable light-induced hydrogen diffusion near room temperature. Journal of Non-Crystalline Solids, 198-200. pp. 441-444. ISSN 0022-3093Full text not available in this repository. (Request a copy from the Strathclyde author)
A 5-day, high-intensity (9 W cm−2), red-light soak of a-Si:H at 65°C yields no detectable H diffusion in a tracer experiment. A new upper bound to the light-induced diffusion coefficient at a temperature so low that thermal diffusion is negligible is found. The null result found here is incompatible with models in which H emission from SiH bonds is proportional at all times to both the light intensity and the metastable defect creation rate. However, this result is compatible with the model proposed by Santos et al. in which both H emission and metastable defect creation are proportional to the product of the free electron and hole densities. In this model, this result implies that fewer than 500 H emissions occur per created metastable defect.
|Keywords:||hydrogen diffusion , non-crystalline solids, Electrical engineering. Electronics Nuclear engineering, Materials Chemistry, Ceramics and Composites, Electronic, Optical and Magnetic Materials, Condensed Matter Physics|
|Subjects:||Technology > Electrical engineering. Electronics Nuclear engineering|
|Department:||Faculty of Engineering > Electronic and Electrical Engineering|
|Depositing user:||Pure Administrator|
|Date Deposited:||12 Oct 2011 15:51|
|Last modified:||04 May 2016 19:33|