Gleskova, H. and Wagner, S. and Shen, D. S. (1998) Photoresist-free fabrication process for a-Si:H thin film transistors. Journal of Non-Crystalline Solids, 227-230 (PART 2). pp. 1217-1220. ISSN 0022-3093Full text not available in this repository. (Request a copy from the Strathclyde author)
We fabricated a-Si:H thin-film transistors by using only computer-generated masks of xerographic toner, which replaces photoresist in each patterning step. This photoresist-free process produced thin film transistors with an on/off current ratio of ∼ 107, a threshold voltage of ∼ 3 V and an electron mobility of ∼ 1 cm2 V-1 s-1.
|Keywords:||thin-film transistors , photoresist, Electrical engineering. Electronics Nuclear engineering, Materials Chemistry, Ceramics and Composites, Electronic, Optical and Magnetic Materials, Condensed Matter Physics|
|Subjects:||Technology > Electrical engineering. Electronics Nuclear engineering|
|Department:||Faculty of Engineering > Electronic and Electrical Engineering|
|Depositing user:||Pure Administrator|
|Date Deposited:||12 Oct 2011 14:54|
|Last modified:||27 Apr 2016 17:15|