Gleskova, Helena and Wagner, S. and Shen, D. (1998) Photoresist-free fabrication process for a-Si:H TFTs. Journal of Non-crystalline Solids, 227-230. pp. 1217-1220. ISSN 0022-3093
Full text not available in this repository. (Request a copy from the Strathclyde author)Official URL: http://dx.doi.org/10.1016/S0022-3093(98)00308-1
Abstract
We fabricated a-Si:H thin-film transistors by using only computer-generated masks of xerographic toner, which replaces photoresist in each patterning step. This photoresist-free process produced thin film transistors with an on/off current ratio of ∼107, a threshold voltage of ∼3 V and an electron mobility of ∼1 cm2 V−1 s−1.
| Item type: | Article |
|---|---|
| ID code: | 33412 |
| Keywords: | thin-film transistors , photoresist, Electrical engineering. Electronics Nuclear engineering |
| Subjects: | Technology > Electrical engineering. Electronics Nuclear engineering |
| Department: | Faculty of Engineering > Electronic and Electrical Engineering |
| Related URLs: | |
| Depositing user: | Pure Administrator |
| Date Deposited: | 12 Oct 2011 15:54 |
| Last modified: | 04 Oct 2012 13:52 |
| URI: | http://strathprints.strath.ac.uk/id/eprint/33412 |
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