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Photoresist-free fabrication process for a-Si:H thin film transistors

Gleskova, H. and Wagner, S. and Shen, D. S. (1998) Photoresist-free fabrication process for a-Si:H thin film transistors. Journal of Non-Crystalline Solids, 227-230 (PART 2). pp. 1217-1220. ISSN 0022-3093

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Abstract

We fabricated a-Si:H thin-film transistors by using only computer-generated masks of xerographic toner, which replaces photoresist in each patterning step. This photoresist-free process produced thin film transistors with an on/off current ratio of ∼ 107, a threshold voltage of ∼ 3 V and an electron mobility of ∼ 1 cm2 V-1 s-1.

Item type: Article
ID code: 33412
Keywords: thin-film transistors , photoresist, Electrical engineering. Electronics Nuclear engineering, Materials Chemistry, Ceramics and Composites, Electronic, Optical and Magnetic Materials, Condensed Matter Physics
Subjects: Technology > Electrical engineering. Electronics Nuclear engineering
Department: Faculty of Engineering > Electronic and Electrical Engineering
Related URLs:
Depositing user: Pure Administrator
Date Deposited: 12 Oct 2011 15:54
Last modified: 08 May 2014 09:22
URI: http://strathprints.strath.ac.uk/id/eprint/33412

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