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Photoresist-free fabrication process for a-Si:H TFTs

Gleskova, Helena and Wagner, S. and Shen, D. (1998) Photoresist-free fabrication process for a-Si:H TFTs. Journal of Non-crystalline Solids, 227-230. pp. 1217-1220. ISSN 0022-3093

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Abstract

We fabricated a-Si:H thin-film transistors by using only computer-generated masks of xerographic toner, which replaces photoresist in each patterning step. This photoresist-free process produced thin film transistors with an on/off current ratio of ∼107, a threshold voltage of ∼3 V and an electron mobility of ∼1 cm2 V−1 s−1.

Item type: Article
ID code: 33412
Keywords: thin-film transistors , photoresist, Electrical engineering. Electronics Nuclear engineering
Subjects: Technology > Electrical engineering. Electronics Nuclear engineering
Department: Faculty of Engineering > Electronic and Electrical Engineering
Related URLs:
    Depositing user: Pure Administrator
    Date Deposited: 12 Oct 2011 15:54
    Last modified: 04 Oct 2012 13:52
    URI: http://strathprints.strath.ac.uk/id/eprint/33412

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