Branz, Howard M. and Asher, Sally and Gleskova, Helena and Wagner, Sigurd (1999) Light-induced D diffusion measurements in hydrogenated amorphous silicon : testing H metastability models. Physical Review B (Condensed Matter), 59 (8). pp. 5513-5520. ISSN 0163-1829Full text not available in this repository. (Request a copy from the Strathclyde author)
We measure light-induced D tracer diffusion in hydrogenated amorphous silicon samples under conditions at which thermal diffusion is negligible. Under high-intensity (9 W cm-2), red-light soaking at 135°C, the D diffusion coefficient is DD= 1.3×10-18 cm2 s-1 and the rate of D emission from Si-D to transport is 3.5 × 10-5 s-1. We also find an upper bound of DD=3×10-20 cm2 s-1, the light-induced diffusion coefficient at 65°C. Previous experiments had revealed only "light-enhanced" diffusion between from 200 to 300°C, a regime in which thermal diffusion is also significant. Our 135°C result extends the range of the 0.9-eV activation energy for this diffusion; our 65°C upper bound is consistent with the extrapolation of the higher temperature data. We also measure metastable defect creation at 65 and 135°C to test models of light-induced metastability that involve emission of H from Si-H bonds to an H transport level. This class of models can be limited, but not excluded, by our data. The H emission parameter of the H collision model of metastability is also estimated.
|Keywords:||hydrogenated amorphous silicon , metastability models , metastability, Electrical engineering. Electronics Nuclear engineering, Electronic, Optical and Magnetic Materials, Condensed Matter Physics|
|Subjects:||Technology > Electrical engineering. Electronics Nuclear engineering|
|Department:||Faculty of Engineering > Electronic and Electrical Engineering|
|Depositing user:||Pure Administrator|
|Date Deposited:||12 Oct 2011 14:40|
|Last modified:||10 Jun 2016 03:08|