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Amorphous silicon thin-film transistors on compliant polyimide foil substrates

Gleskova, Helena and Wagner, S. (1999) Amorphous silicon thin-film transistors on compliant polyimide foil substrates. IEEE Electron Device Letters, 20 (9). pp. 473-475.

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Abstract

Much of the mechanical strain in semiconductor devices can be relieved when they are made on compliant substrates. We demonstrate this strain relief with amorphous silicon thin-film transistors made on 25-μm thick polyimide foil, which can be bent to radii of curvature R down to 0.5 mm without substantial change in electrical characteristics.

Item type: Article
ID code: 33408
Keywords: silicon thin-film transistors , polyimide foil substrates, polymer films, Electrical engineering. Electronics Nuclear engineering
Subjects: Technology > Electrical engineering. Electronics Nuclear engineering
Department: Faculty of Engineering > Electronic and Electrical Engineering
Related URLs:
    Depositing user: Pure Administrator
    Date Deposited: 12 Oct 2011 11:14
    Last modified: 04 Oct 2012 13:52
    URI: http://strathprints.strath.ac.uk/id/eprint/33408

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