Gleskova, Helena and Wagner, Sigurd (1999) Amorphous silicon thin-film transistors on compliant polyimide foil substrates. IEEE Electron Device Letters, 20 (9). pp. 473-475.Full text not available in this repository. Request a copy from the Strathclyde author
Much of the mechanical strain in semiconductor devices can be relieved when they are made on compliant substrates. We demonstrate this strain relief with amorphous silicon thin-film transistors made on 25-μm thick polyimide foil, which can be bent to radii of curvature R down to 0.5 mm without substantial change in electrical characteristics.
|Keywords:||silicon thin-film transistors , polyimide foil substrates, polymer films, Electrical engineering. Electronics Nuclear engineering, Electronic, Optical and Magnetic Materials, Electrical and Electronic Engineering|
|Subjects:||Technology > Electrical engineering. Electronics Nuclear engineering|
|Department:||Faculty of Engineering > Electronic and Electrical Engineering|
|Depositing user:||Pure Administrator|
|Date Deposited:||12 Oct 2011 10:14|
|Last modified:||22 Mar 2017 11:36|