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Amorphous silicon thin-film transistors on compliant polyimide foil substrates

Gleskova, Helena and Wagner, Sigurd (1999) Amorphous silicon thin-film transistors on compliant polyimide foil substrates. IEEE Electron Device Letters, 20 (9). pp. 473-475.

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Abstract

Much of the mechanical strain in semiconductor devices can be relieved when they are made on compliant substrates. We demonstrate this strain relief with amorphous silicon thin-film transistors made on 25-μm thick polyimide foil, which can be bent to radii of curvature R down to 0.5 mm without substantial change in electrical characteristics.