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Failure resistance of amorphous silicon transistors under extreme in-plane strain

Gleskova, H. and Wagner, S. and Suo, Z. (1999) Failure resistance of amorphous silicon transistors under extreme in-plane strain. Applied Physics Letters, 75 (19). pp. 3011-3013. ISSN 0003-6951

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Abstract

We have applied strain on thin-film transistors (TFTs) made of hydrogenated amorphous silicon on polyimide foil. In tension, the amorphous layers of the TFT fail by periodic cracks at a strain of ∼0.5%. In compression, the TFTs do not fail when strained by up to 2%, which is the highest value we can set controllably. The amorphous transistor materials can support such large strains because they lack a mechanism for dislocation motion. While the tensile driving force is sufficient to overcome the resistance to crack formation, the compressive failure mechanism of delamination is not activated because of the large delamination length required between transistor layers and polymer substrate.

Item type: Article
ID code: 33407
Keywords: amorphous silicon transistors , transistor layers, Electrical engineering. Electronics Nuclear engineering, Physics and Astronomy (miscellaneous)
Subjects: Technology > Electrical engineering. Electronics Nuclear engineering
Department: Faculty of Engineering > Electronic and Electrical Engineering
Related URLs:
Depositing user: Pure Administrator
Date Deposited: 12 Oct 2011 11:12
Last modified: 07 May 2014 10:00
URI: http://strathprints.strath.ac.uk/id/eprint/33407

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