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a-Si:H thin film transistors after very high strain

Gleskova, H. and Wagner, S. and Suo, Z. (2000) a-Si:H thin film transistors after very high strain. Journal of Non-Crystalline Solids, 266-269 B. pp. 1320-1324. ISSN 0022-3093

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Abstract

We fabricate amorphous silicon (a-Si:H) thin-film transistors (TFTs) on a 25 μm Kapton foil, and then bend the foil over mandrels of various radii. The bending causes tensile strain in the TFTs when they face out, and compressive strain when they face in. After bending, we measure the electrical properties of the TFTs. After ∼2% of compressive strain, there is no change in the TFT electrical performance due to bending, namely in the on-current, off-current, source-gate leakage current, mobility and the threshold voltage. In tension, no change in the TFT performance is observed up to the strain of ∼0.5%. For larger tensile strains TFTs fail mechanically by cracking of the TFT layers. These cracks run perpendicularly to the bending direction.

Item type: Article
ID code: 33403
Keywords: thin film transistors , amorphous silicon , thin film electronics, Electrical engineering. Electronics Nuclear engineering, Materials Chemistry, Ceramics and Composites, Electronic, Optical and Magnetic Materials, Condensed Matter Physics
Subjects: Technology > Electrical engineering. Electronics Nuclear engineering
Department: Faculty of Engineering > Electronic and Electrical Engineering
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Depositing user: Pure Administrator
Date Deposited: 12 Oct 2011 11:10
Last modified: 08 May 2014 09:23
URI: http://strathprints.strath.ac.uk/id/eprint/33403

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