Pincik, E. and Jergel, M. and Gmucova, K. and Gleskova, Helena and Kucera, M. and Mullerova, J. and Brunel, M. and Mikula, M. (2000) Low-energy argon ion beam treatment of a-Si:H/Si structure. Applied Surface Science, 166 (1-4). pp. 61-66. ISSN 0169-4332Full text not available in this repository. (Request a copy from the Strathclyde author)
The results of several surface-sensitive techniques applied to the investigation of ion beam-treated a-Si:H/crystalline silicon structures, such as deep-level transient spectroscopy (DLTS), photoluminescence at 6 K and room temperature, and X-ray diffraction at grazing incidence (XRDGI) are presented. Three important results follow from this contribution. (i) Two groups of gap states with thermal activation energies of 0.71 and 0.84 eV were identified and found to be sensitive to illumination, this property exhibiting metastable character; we suppose effects similar to those observed in the porous silicon/silicon and a-Si:H/silicon structures. (ii) Broader luminescence peaks were identified optically with the energies lying in the range of 0.7 to 0.95 eV, the most distinct one being at 0.85 eV. (iii) X-ray reflection at 2θ∼28° has been found as the reflection suitable for tracing the structural properties of a-Si:H layer.
|Keywords:||defect-pool model, gap states, hydrogenated amorphous-silicon, x-ray reflection, H/Si, ion beam, a-Si, Electrical engineering. Electronics Nuclear engineering, Electrical and Electronic Engineering|
|Subjects:||Technology > Electrical engineering. Electronics Nuclear engineering|
|Department:||Faculty of Engineering > Electronic and Electrical Engineering|
|Depositing user:||Pure Administrator|
|Date Deposited:||12 Oct 2011 10:05|
|Last modified:||27 Apr 2016 17:15|