Hernandez, S. and Cusco, R. and Artus, L. and O'Donnell, K.P. and Martin, Robert and Watson, I.M. and Nanishi, Y. and Kurouchi, M. and van der Stricht, W. (2005) Dependence of the E-2 and A(1)(LO) modes on InN fraction in InGaN epilayers. In: GaN, AIN, InN and Their Alloys. Materials research society symposium proceedings . Materials Research Society, Warrendale, pp. 179-184. ISBN 1558997792
Full text not available in this repository. (Request a copy from the Strathclyde author)Abstract
The behavior of the E-2 and A(1)(LO) optical phonons in InxGa1-xN has been analyzed by Raman scattering over the whole composition range. The frequencies of the E-2 and A(1)(LO) modes decrease with increasing InN fraction. These modes display a significant broadening for an InN fraction of approximate to 60% and their linewidth decreases towards both ends of the composition range as a consequence of reduced cation disorder. Our results show a one-mode behavior for, both E-2 and A(1)(LO) modes of InGaN.
| Item type: | Book Section |
|---|---|
| ID code: | 32467 |
| Keywords: | MBE , raman-scattering, indium nitride, band-gap , phonon , alloys , sapphire , epitaxy , growth , layers , Physics |
| Subjects: | Science > Physics |
| Department: | Faculty of Science > Physics |
| Related URLs: | |
| Depositing user: | Pure Administrator |
| Date Deposited: | 08 Aug 2011 16:13 |
| Last modified: | 04 Oct 2012 16:31 |
| URI: | http://strathprints.strath.ac.uk/id/eprint/32467 |
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