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Dependence of the E-2 and A(1)(LO) modes on InN fraction in InGaN epilayers

Hernandez, S. and Cusco, R. and Artus, L. and O'Donnell, K.P. and Martin, Robert and Watson, I.M. and Nanishi, Y. and Kurouchi, M. and van der Stricht, W. (2005) Dependence of the E-2 and A(1)(LO) modes on InN fraction in InGaN epilayers. In: GaN, AIN, InN and Their Alloys. Materials research society symposium proceedings . Materials Research Society, Warrendale, pp. 179-184. ISBN 1558997792

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Abstract

The behavior of the E-2 and A(1)(LO) optical phonons in InxGa1-xN has been analyzed by Raman scattering over the whole composition range. The frequencies of the E-2 and A(1)(LO) modes decrease with increasing InN fraction. These modes display a significant broadening for an InN fraction of approximate to 60% and their linewidth decreases towards both ends of the composition range as a consequence of reduced cation disorder. Our results show a one-mode behavior for, both E-2 and A(1)(LO) modes of InGaN.

Item type: Book Section
ID code: 32467
Keywords: MBE , raman-scattering, indium nitride, band-gap , phonon , alloys , sapphire , epitaxy , growth , layers , Physics
Subjects: Science > Physics
Department: Faculty of Science > Physics
Related URLs:
    Depositing user: Pure Administrator
    Date Deposited: 08 Aug 2011 16:13
    Last modified: 06 Sep 2014 06:54
    URI: http://strathprints.strath.ac.uk/id/eprint/32467

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