Dependence of the E-2 and A(1)(LO) modes on InN fraction in InGaN epilayers

Hernandez, S. and Cusco, R. and Artus, L. and O'Donnell, K.P. and Martin, Robert and Watson, I.M. and Nanishi, Y. and Kurouchi, M. and van der Stricht, W.; Gil, B. and Kuzuhara, M. and Manfra, M. and Wetzel, C., eds. (2005) Dependence of the E-2 and A(1)(LO) modes on InN fraction in InGaN epilayers. In: GaN, AIN, InN and Their Alloys. Materials research society symposium proceedings . Materials Research Society, USA, pp. 179-184. ISBN 1558997792

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Abstract

The behavior of the E-2 and A(1)(LO) optical phonons in InxGa1-xN has been analyzed by Raman scattering over the whole composition range. The frequencies of the E-2 and A(1)(LO) modes decrease with increasing InN fraction. These modes display a significant broadening for an InN fraction of approximate to 60% and their linewidth decreases towards both ends of the composition range as a consequence of reduced cation disorder. Our results show a one-mode behavior for, both E-2 and A(1)(LO) modes of InGaN.

  • Item type:Book Section
    ID code:32467
    Dates:
    Date
    Event
    1 July 2005
    Published
    Subjects:Science > Physics
    Department:Faculty of Science > Physics
    Depositing user: Pure Administrator
    Date deposited:08 Aug 2011 15:13
    Last modified:08 Apr 2024 12:45
    URI:https://strathprints.strath.ac.uk/id/eprint/32467
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