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Molecular beam epitaxy as a method for the growth of free-standing bulk zinc-blende GaN and AlGaN crystals

Novikov, S.V. and Staddon, C.R. and Foxon, C.T. and Luckert, Franziska and Edwards, Paul and Martin, Robert and Kent, A.J. (2011) Molecular beam epitaxy as a method for the growth of free-standing bulk zinc-blende GaN and AlGaN crystals. Journal of Crystal Growth, 323 (1). pp. 80-83. ISSN 0022-0248

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We have studied the growth of zinc-blende GaN and AlxGa1-xN layers, structures and bulk crystals by molecular beam epitaxy (MBE). MBE is normally regarded as an epitaxial technique for growth of very thin layers with monolayer control of their thickness. However, we have used the MBE technique for bulk crystal growth and have produced GaN layers up to 100 mu m in thickness. Thick, undoped, cubic GaN films were grown on semi-insulating GaAs (0 0 1) substrates by a modified plasma-assisted molecular beam epitaxy (PA-MBE) method and were removed from the GaAs substrate after the growth. The resulting free-standing GaN wafers may be used as substrates for further epitaxy of cubic GaN-based structures and devices. We have demonstrated that the PA-MBE process, we had developed, also allows us to achieve free-standing zinc-blende AlxGa1-xN wafers.

Item type: Article
ID code: 32270
Keywords: substrates, molecular beam epitaxy, nitrides, semiconducting III–V materials, free-standing bulk , zinc-blende GaN , AlGaN crystals, Physics, Materials Chemistry, Inorganic Chemistry, Condensed Matter Physics
Subjects: Science > Physics
Department: Faculty of Science > Physics
Technology and Innovation Centre > Bionanotechnology
Technology and Innovation Centre > Photonics
Depositing user: Pure Administrator
Date Deposited: 21 Jul 2011 14:07
Last modified: 05 Jan 2016 12:41
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