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The dependence of the optical energies on InGaN composition

O'Donnell, K.P. and Martin, R.W. and Trager-Cowan, C. and White, M.E. (2001) The dependence of the optical energies on InGaN composition. Materials Science and Engineering B, 82 (1-3). pp. 194-196. ISSN 0921-5107

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Abstract

A wide-ranging experimental approach reveals a linear relationship between photoluminescence band peak energy and measured indium fraction for In[x]Ga[1] N epilayers with 0 < x < 0.40. We examine the dependence of the emission spectrum on composition using local measurements of the average indium content by Rutherford backscattering spectrometry, energy dispersive X-ray analysis, extended X-ray absorption fine structure and wavelength dispersed electron probe micro-analysis. Corresponding absorption and photoluminescence excitation data reveal the existence of a supplementary linear relationship between the optical bandgap and the indium fraction. Our observations provide definitive and conclusive evidence that the optical properties of InGaN do not conform to current theoretical descriptions of alloy band structure.

Item type: Article
ID code: 3103
Keywords: Bowing parameter, nitride semiconductors, pptical properties, Stokes' shift, nanoscience, Solid state physics. Nanoscience, Mechanics of Materials, Materials Science(all), Mechanical Engineering, Condensed Matter Physics
Subjects: Science > Physics > Solid state physics. Nanoscience
Department: Faculty of Science > Physics
Related URLs:
    Depositing user: Strathprints Administrator
    Date Deposited: 04 Apr 2007
    Last modified: 04 Sep 2014 10:40
    URI: http://strathprints.strath.ac.uk/id/eprint/3103

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