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Comment on "Effect of growth interruptions on the light emission and indium clustering of InGaN/GaN multiple quantum wells" [Appl. Phys. Lett. 79, 2594 (2001)]

Martin, R W and O'Donnell, K P and Edwards, P R (2002) Comment on "Effect of growth interruptions on the light emission and indium clustering of InGaN/GaN multiple quantum wells" [Appl. Phys. Lett. 79, 2594 (2001)]. Applied Physics Letters, 81 (16). pp. 3100-3101. ISSN 0003-6951

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    Abstract

    This entry is a comment on "Effect of growth interruptions on the light emission and indium clustering.

    Item type: Article
    ID code: 30542
    Keywords: energies, dots, indium compounds, gallium compounds, wide band gap semiconductors , Physics
    Subjects: Science > Physics
    Department: Faculty of Science > Physics
    Related URLs:
      Depositing user: Pure Administrator
      Date Deposited: 14 Jun 2011 12:44
      Last modified: 20 Jul 2013 21:40
      URI: http://strathprints.strath.ac.uk/id/eprint/30542

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