O'Donnell, K P and Pereira, S and Martin, R W and Edwards, P R and Tobin, M J and Mosselmans, J F W (2003) Wishful physics: Some common misconceptions about InGaN. Physica Status Solidi A - Applications and Materials Science, 195 (3). pp. 532-536.Full text not available in this repository. (Request a copy from the Strathclyde author)
All III-N visible light emitting devices contain ultrathin active layers of InGaN. Although this material has been widely studied during the last ten years or so, opinion is still divided as to its nature. Most researchers would agree with the proposition that III-nitride "alloys" are a mess, at least when compared with analogous III-As materials. It may be further argued that the quality of InGaN samples is at present too variable to allow general statements to be made about the material. We repudiate this misconception. The similarities between luminescent InGaN samples from different laboratories outweigh the differences. Any differences that do occur can be confidently accounted for, in terms of a peculiar growth habit of III-nitrides. We also briefly discuss the status of accidental InN quantum dots.
|Keywords:||photoluminescence excitation spectroscopy, absorption fine-structure, molecular-beam epitaxy, X-ray-diffraction, exciton localization, quantum-wells, stokes shift, epilayers, layers, dependence, Physics, Electronic, Optical and Magnetic Materials, Condensed Matter Physics|
|Subjects:||Science > Physics|
|Department:||Faculty of Science > Physics|
|Depositing user:||Pure Administrator|
|Date Deposited:||18 May 2011 14:28|
|Last modified:||04 May 2016 18:12|