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Wishful physics: Some common misconceptions about InGaN

O'Donnell, K P and Pereira, S and Martin, R W and Edwards, P R and Tobin, M J and Mosselmans, J F W (2003) Wishful physics: Some common misconceptions about InGaN. Physica Status Solidi A - Applications and Materials Science, 195 (3). pp. 532-536.

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Abstract

All III-N visible light emitting devices contain ultrathin active layers of InGaN. Although this material has been widely studied during the last ten years or so, opinion is still divided as to its nature. Most researchers would agree with the proposition that III-nitride "alloys" are a mess, at least when compared with analogous III-As materials. It may be further argued that the quality of InGaN samples is at present too variable to allow general statements to be made about the material. We repudiate this misconception. The similarities between luminescent InGaN samples from different laboratories outweigh the differences. Any differences that do occur can be confidently accounted for, in terms of a peculiar growth habit of III-nitrides. We also briefly discuss the status of accidental InN quantum dots.

Item type: Article
ID code: 30541
Keywords: photoluminescence excitation spectroscopy, absorption fine-structure, molecular-beam epitaxy, X-ray-diffraction, exciton localization, quantum-wells, stokes shift, epilayers, layers, dependence, Physics, Electronic, Optical and Magnetic Materials, Condensed Matter Physics
Subjects: Science > Physics
Department: Faculty of Science > Physics
Related URLs:
    Depositing user: Pure Administrator
    Date Deposited: 18 May 2011 15:28
    Last modified: 05 Sep 2014 08:25
    URI: http://strathprints.strath.ac.uk/id/eprint/30541

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