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Electron probe microanalysis of rare earth doped gallium nitride light emitters

Dalmasso, S and Martin, R W and Edwards, P R and O'Donnell, K P and Pipeleers, B and Vantomme, A and Nakanishi, Y and Wakahara, A and Yoshida, A and , RENiBEI Network (2003) Electron probe microanalysis of rare earth doped gallium nitride light emitters. Microscopy of semiconducting materials, 180 (180). pp. 555-558. ISSN 1742-6596

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Abstract

Rare earth doped GaN structures offer potential for optical devices emitting in the visible spectral region. Doping with europium and erbium produces characteristic sharp red and green emission lines respectively, due to intra-4f(n) shell electron transitions. We describe studies of Eu- and Er- ion implanted MOCVD grown GaN epilayers on sapphire using an electron probe micro-analyser modified to allow cathodoluminescence (CL) spectroscopy. Wavelength dispersive X-ray analysis is shown to be an accurate technique for quantifying rare earth concentrations in GaN, down to similar to0.06 atomic % and is complemented by CL acquired at the same time from the same microscopic region of sample.

Item type: Article
ID code: 30539
Keywords: Gan, photoluminescence, luminescence, ER, EU, Physics
Subjects: Science > Physics
Department: Faculty of Science > Physics
Related URLs:
    Depositing user: Pure Administrator
    Date Deposited: 18 May 2011 16:19
    Last modified: 17 Jul 2013 10:22
    URI: http://strathprints.strath.ac.uk/id/eprint/30539

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