Effect of dislocations on charge carrier mobility-lifetime product in synthetic single crystal diamond

Lohstroh, A. and Sellin, P. J. and Wang, S. G. and Davies, A. W. and Parkin, J. and Martin, R. W. and Edwards, P. R. (2007) Effect of dislocations on charge carrier mobility-lifetime product in synthetic single crystal diamond. Applied Physics Letters, 90 (10). 102111. ISSN 0003-6951 (https://doi.org/10.1063/1.2711754)

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Abstract

The authors report correlations between variations in charge transport of electrons and holes in synthetic single crystal diamond and the presence of nitrogen impurities and dislocations. The spatial distribution of these defects was imaged using their characteristic luminescence emission and compared with maps of carrier drift length measured by ion beam induced charge imaging. The images indicate a reduction of electron and hole mobility-lifetime product due to nitrogen impurities and dislocations. Very good charge transport is achieved in selected regions where the dislocation density is minimal.

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• Item metadata

  Item type:	Article
  ID code:	30531
  Dates:	Date Event 7 March 2007 Published
  Subjects:	Science > Physics
  Department:	Faculty of Science > Physics
  Depositing user:	Pure Administrator
  Date deposited:	18 May 2011 13:47
  Last modified:	09 Apr 2024 08:12
  URI:	https://strathprints.strath.ac.uk/id/eprint/30531