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Site multiplicity of rare earth ions in III-nitrides

O'Donnell, K.P. and Katchkanov, V. and Wang, K. and Martin, R.W. and Hourahine, B. and Edwards, P.R. and Nogales, E. and Mosselmans, J.F.W. and De-Vries, B. (2005) Site multiplicity of rare earth ions in III-nitrides. MRS Online Proceedings Library, 831. pp. 527-535. ISSN 0272-9172

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Abstract

This presentation reviews recent lattice location studies of RE ions in GaN by electron emission channelling (EC) and X-ray absorption fine structure (XAFS) techniques. These studies agree that RE ions at low concentrations (whether they are incorporated during growth or introduced later by ion implantation) predominantly occupy Ga substitutional sites, as expected from considerations of charge equivalence. We combine this result with some examples of the welldocumented richness of optical spectra of GaN:RE3+ to suggest that the luminescence of these materials may be ascribed to a family of rather similar sites, all of which feature the REGa defect.

Item type: Article
ID code: 3024
Keywords: site multiplicity, rare earth ions, III-nitrides, nanoscience, Solid state physics. Nanoscience, Mechanics of Materials, Materials Science(all), Mechanical Engineering, Condensed Matter Physics
Subjects: Science > Physics > Solid state physics. Nanoscience
Department: Faculty of Science > Physics
Unknown Department
Depositing user: Strathprints Administrator
Date Deposited: 27 Mar 2007
Last modified: 15 Apr 2015 10:34
Related URLs:
URI: http://strathprints.strath.ac.uk/id/eprint/3024

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