O'Donnell, K.P. and Katchkanov, V. and Wang, K. and Martin, R.W. and Hourahine, B. and Edwards, P.R. and Nogales, E. and Mosselmans, J.F.W. and De-Vries, B. (2004) Site multiplicity of rare earth ions in III-nitrides. MRS Online Proceedings Library, 831. pp. 527-535. ISSN 0272-9172Full text not available in this repository. (Request a copy from the Strathclyde author)
This presentation reviews recent lattice location studies of RE ions in GaN by electron emission channelling (EC) and X-ray absorption fine structure (XAFS) techniques. These studies agree that RE ions at low concentrations (whether they are incorporated during growth or introduced later by ion implantation) predominantly occupy Ga substitutional sites, as expected from considerations of charge equivalence. We combine this result with some examples of the welldocumented richness of optical spectra of GaN:RE3+ to suggest that the luminescence of these materials may be ascribed to a family of rather similar sites, all of which feature the REGa defect.
|Keywords:||site multiplicity, rare earth ions, III-nitrides, nanoscience, Solid state physics. Nanoscience, Mechanics of Materials, Materials Science(all), Mechanical Engineering, Condensed Matter Physics|
|Subjects:||Science > Physics > Solid state physics. Nanoscience|
|Department:||Faculty of Science > Physics|
|Depositing user:||Strathprints Administrator|
|Date Deposited:||27 Mar 2007|
|Last modified:||29 Apr 2016 00:21|