Tierno, A. and Ackemann, T. and Leburn, C. G. and Brown, C. T. A. (2010) Saturation of absorption and gain in a quantum dot diode with continuous-wave driving. Applied Physics Letters, 97 (23). p. 231104. ISSN 0003-6951
Full text not available in this repository. (Request a copy from the Strathclyde author)Official URL: http://dx.doi.org/10.1063/1.3524824
Abstract
We have observed saturation of absorption and gain in ensembles of InAs/GaAs self-assembled quantum dots at room temperature with continuous-wave driving in the 1.24-1.28 mu m wavelength range. The saturation intensity was found to be I-sat=(1.4-4.5) X 10(9) W/m(2) in absorption and I-sat =(0.2-3.8)X10(9) W/m(2) in gain, depending on the detuning. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3524824]
| Item type: | Article |
|---|---|
| ID code: | 30232 |
| Keywords: | gallium arsenide, wide band gap semiconductors , semiconductor quantum dots, semiconductor diodes, self-assembly, indium compounds, III-V semiconductors, Physics |
| Subjects: | Science > Physics |
| Department: | Faculty of Science > Physics |
| Related URLs: | |
| Depositing user: | Pure Administrator |
| Date Deposited: | 12 May 2011 05:15 |
| Last modified: | 12 Mar 2012 11:25 |
| URI: | http://strathprints.strath.ac.uk/id/eprint/30232 |
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