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Saturation of absorption and gain in a quantum dot diode with continuous-wave driving

Tierno, A. and Ackemann, T. and Leburn, C. G. and Brown, C. T. A. (2010) Saturation of absorption and gain in a quantum dot diode with continuous-wave driving. Applied Physics Letters, 97 (23). p. 231104. ISSN 0003-6951

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Abstract

We have observed saturation of absorption and gain in ensembles of InAs/GaAs self-assembled quantum dots at room temperature with continuous-wave driving in the 1.24-1.28 mu m wavelength range. The saturation intensity was found to be I-sat=(1.4-4.5) X 10(9) W/m(2) in absorption and I-sat =(0.2-3.8)X10(9) W/m(2) in gain, depending on the detuning. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3524824]

Item type: Article
ID code: 30232
Keywords: gallium arsenide, wide band gap semiconductors , semiconductor quantum dots, semiconductor diodes, self-assembly, indium compounds, III-V semiconductors, Physics, Physics and Astronomy (miscellaneous)
Subjects: Science > Physics
Department: Faculty of Science > Physics
Related URLs:
Depositing user: Pure Administrator
Date Deposited: 12 May 2011 05:15
Last modified: 27 Mar 2014 09:17
URI: http://strathprints.strath.ac.uk/id/eprint/30232

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