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High temperature annealing and optical activation of Eu implanted GaN

Lorenz, K. and Wahl, U. and Alves, E. and Dalmasso, S. and Martin, R.W. and O'Donnell, K.P. and Ruffenach, S. and Briot, O. (2005) High temperature annealing and optical activation of Eu implanted GaN. Applied Physics Letters, 85 (14). pp. 2712-2714. ISSN 0003-6951

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Abstract

Europium was implanted into GaN through a 10 nm thick epitaxially grown AlN layer that protects the GaN surface during the implantation and also serves as a capping layer during the subsequent furnace annealing. Employing this AlN layer prevents the formation of an amorphous surface layer during the implantation. Furthermore, no dissociation of the crystal was observed by Rutherford backscattering and channeling measurements for annealing temperatures up to 1300°C. Remarkably, the intensity of the Eu related luminescence, as measured by cathodoluminescence at room temperature, increases by one order of magnitude within the studied annealing range between 1100 and 1300°C.

Item type: Article
ID code: 3006
Keywords: high temperature annealing, optical activation, Eu implanted GaN, nanoscience, Solid state physics. Nanoscience, Physics and Astronomy (miscellaneous)
Subjects: Science > Physics > Solid state physics. Nanoscience
Department: Faculty of Science > Physics
Related URLs:
    Depositing user: Strathprints Administrator
    Date Deposited: 12 Mar 2007
    Last modified: 04 Sep 2014 13:31
    URI: http://strathprints.strath.ac.uk/id/eprint/3006

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