Lorenz, K. and Wahl, U. and Alves, E. and Dalmasso, S. and Martin, R.W. and O'Donnell, K.P. and Ruffenach, S. and Briot, O. (2005) High temperature annealing and optical activation of Eu implanted GaN. Applied Physics Letters, 85 (14). pp. 2712-2714. ISSN 0003-6951Full text not available in this repository. (Request a copy from the Strathclyde author)
Europium was implanted into GaN through a 10 nm thick epitaxially grown AlN layer that protects the GaN surface during the implantation and also serves as a capping layer during the subsequent furnace annealing. Employing this AlN layer prevents the formation of an amorphous surface layer during the implantation. Furthermore, no dissociation of the crystal was observed by Rutherford backscattering and channeling measurements for annealing temperatures up to 1300°C. Remarkably, the intensity of the Eu related luminescence, as measured by cathodoluminescence at room temperature, increases by one order of magnitude within the studied annealing range between 1100 and 1300°C.
|Keywords:||high temperature annealing, optical activation, Eu implanted GaN, nanoscience, Solid state physics. Nanoscience, Physics and Astronomy (miscellaneous)|
|Subjects:||Science > Physics > Solid state physics. Nanoscience|
|Department:||Faculty of Science > Physics|
|Depositing user:||Strathprints Administrator|
|Date Deposited:||12 Mar 2007|
|Last modified:||29 Apr 2016 07:49|