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High extraction efficiency InGaN micro-ring light emitting diodes

Choi, H.W. and Dawson, M.D. and Edwards, P.R. and Martin, R.W. (2004) High extraction efficiency InGaN micro-ring light emitting diodes. Applied Physics Letters, 83 (22). pp. 4483-4485. ISSN 0003-6951

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Abstract

Light-emitting diodes (LEDs) based on an interconnected array of GaN/InGaN micro-ring elements have been demonstrated. The devices have electrical characteristics similar to those of conventional broad-area devices. However, due to the large surface areas provided by the sidewalls, the extraction efficiency is greatly enhanced. Intense light emission at the periphery of the micro-rings is observed upon excitation by an electron beam, suggesting scattering of the photons which are extracted through the sidewalls. The devices provide a doubling in total light output compared to a broad-area reference LED of equal light-generation area.

Item type: Article
ID code: 3005
Keywords: light-emitting diodes, LEDs, GaN/InGaN micro-ring elements, nanoscience, Solid state physics. Nanoscience, Physics and Astronomy (miscellaneous)
Subjects: Science > Physics > Solid state physics. Nanoscience
Department: Faculty of Science > Institute of Photonics
Faculty of Science > Physics
Depositing user: Strathprints Administrator
Date Deposited: 12 Mar 2007
Last modified: 18 Jun 2015 03:45
URI: http://strathprints.strath.ac.uk/id/eprint/3005

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