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Electrical activity of carbon-hydrogen centers in Si

Andersen, O. and Peaker, A.R. and Dobaczewski, L. and Bonde Nielsen, K. and Hourahine, B. and Jones, R. and Briddon, P.R. and Öberg, S. (2002) Electrical activity of carbon-hydrogen centers in Si. Physical Review B: Condensed Matter and Materials Physics, 66 (23). ISSN 1098-0121

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Abstract

The electrical activity of Cs-H defects in Si has been investigated in a combined modeling and experimental study. High-resolution Laplace capacitance spectroscopy with the uniaxial stress technique has been used to measure the stress-energy tensor and the results are compared with theoretical modeling. At low temperatures, implanted H is trapped as a negative-U center with a donor level in the upper half of the gap. However, at higher temperatures, H migrates closer to the carbon impurity and the donor level falls, crossing the gap. At the same time, an acceptor level is introduced into the upper gap making the defect a positive-U center.