Strathprints Home | Open Access | Browse | Search | User area | Copyright | Help | Library Home | SUPrimo

Electronic behavior of rare-earth dopants in AlN: A density-functional study

Petit, S. and Jones, R. and Shaw, M.J. and Briddon, P.R. and Hourahine, B. and Frauenheim, T. (2005) Electronic behavior of rare-earth dopants in AlN: A density-functional study. Physical Review B: Condensed Matter and Materials Physics, 72 (2005). 073205-1. ISSN 1098-0121

Full text not available in this repository. (Request a copy from the Strathclyde author)

Abstract

Local density functional calculations are carried out on Er, Eu, and Tm rare-earth (RE) dopants in hexagonal AlN. We find that the isolated impurities prefer to substitute for Al and, in contrast with isolated RE dopants in GaAs and GaN, REAl defects are electrically active and introduce deep donor levels around Ev+0.5 eV. RE complexes with oxygen and vacancies are discussed; some of these have deep levels in the upper third of the gap and could account for a threshold excitation energy around 4 eV observed for intra-f transitions at 465 and 478 nm in AlN:Tm.

Item type: Article
ID code: 2953
Keywords: local density functional calculations, rare-earth dopants, nanoscience, Solid state physics. Nanoscience, Electronic, Optical and Magnetic Materials, Condensed Matter Physics
Subjects: Science > Physics > Solid state physics. Nanoscience
Department: Faculty of Science > Strathclyde Institute of Pharmacy and Biomedical Sciences
Faculty of Science > Physics
Related URLs:
    Depositing user: Strathprints Administrator
    Date Deposited: 22 Feb 2007
    Last modified: 04 Sep 2014 13:28
    URI: http://strathprints.strath.ac.uk/id/eprint/2953

    Actions (login required)

    View Item