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Interstitial H2 in germanium by Raman scattering and ab initio calculations

Hiller, M. and Lavrov, E.V. and Weber, J. and Hourahine, B. and Jones, R. and Briddon, P.R. (2005) Interstitial H2 in germanium by Raman scattering and ab initio calculations. Physical Review B: Condensed Matter and Materials Physics, 72 (2005). pp. 153201-1. ISSN 1098-0121

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Abstract

Single-crystalline germanium wafers exposed to hydrogen and/or deuterium plasma are studied by means of Raman scattering. The Raman frequencies are compared to results of ab initio calculations. For samples treated with pure hydrogen, Raman measurements performed at a temperature of 80 K reveal two sharp lines at 3826 and 3834 cm−1 with an intensity ratio of 3:1, which are assigned to ortho- and para-H2 trapped at the interstitial T site of the lattice.