Strathprints Home | Open Access | Browse | Search | User area | Copyright | Help | Library Home | SUPrimo

Interstitial H2 in germanium by Raman scattering and ab initio calculations

Hiller, M. and Lavrov, E.V. and Weber, J. and Hourahine, B. and Jones, R. and Briddon, P.R. (2005) Interstitial H2 in germanium by Raman scattering and ab initio calculations. Physical Review B: Condensed Matter and Materials Physics, 72 (2005). pp. 153201-1. ISSN 1098-0121

Full text not available in this repository. (Request a copy from the Strathclyde author)

Abstract

Single-crystalline germanium wafers exposed to hydrogen and/or deuterium plasma are studied by means of Raman scattering. The Raman frequencies are compared to results of ab initio calculations. For samples treated with pure hydrogen, Raman measurements performed at a temperature of 80 K reveal two sharp lines at 3826 and 3834 cm−1 with an intensity ratio of 3:1, which are assigned to ortho- and para-H2 trapped at the interstitial T site of the lattice.

Item type: Article
ID code: 2952
Keywords: single-crystalline germanium wafers, Raman scattering, ab initio calculations, nanoscience, Solid state physics. Nanoscience, Electronic, Optical and Magnetic Materials, Condensed Matter Physics
Subjects: Science > Physics > Solid state physics. Nanoscience
Department: Faculty of Science > Physics
Faculty of Science > Strathclyde Institute of Pharmacy and Biomedical Sciences
Related URLs:
    Depositing user: Strathprints Administrator
    Date Deposited: 22 Feb 2007
    Last modified: 04 Sep 2014 13:31
    URI: http://strathprints.strath.ac.uk/id/eprint/2952

    Actions (login required)

    View Item