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Passive mode-locking of a Ti:sapphire laser by InGaP quantum-dot saturable absorber

Savitski, V.G. and Schlosser, P.J. and Hastie, J.E. and Krysa, A.B. and Roberts, J.S. and Dawson, M.D. and Burns, D. and Calvez, S. (2010) Passive mode-locking of a Ti:sapphire laser by InGaP quantum-dot saturable absorber. IEEE Photonics Technology Letters, 22 (4). pp. 209-211. ISSN 1041-1135

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We demonstrate the use of a novel InGaP quantum-dot (QD) saturable absorber (SA) to induce passively mode-locked (ML) operation of a Ti : sapphire laser. Pulses as short as 518 fs are obtained at 752 nm with an average output power of up to 190 mW for 2.3 W of absorbed pump power at 532 nm. The absorption recovery of the SA is characterized by two decay coefficients: a fast and a slow component having time constants of 0.4 and 300 ps, respectively. The saturation fluence of the InGaP QDs was measured to be 28 J/cm2, the initial low-signal absorption was 1.5%, where 1.15% was nonsaturable loss.