Buried dielectric mirrors for the lateral overgrowth of GaN-based microcavities

Martin, R.W. and Edwards, P.R. and Pecharroman-Gallego, R. and Trager-Cowan, C. and Kim, T. and Kim, H.S. and Kim, K.S. and Watson, I.M. and Dawson, M.D. (2001) Buried dielectric mirrors for the lateral overgrowth of GaN-based microcavities. Physica Status Solidi A, 183 (1). pp. 145-149. ISSN 1862-6300 (http://dx.doi.org/10.1002/1521-396X(200101)183:1<1...)

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Abstract

The use of lateral overgrowth techniques to develop III-nitride microcavities with both mirrors fabricated from very highly reflecting dielectric multilayers (e.g. SiO2/ZrO2) will be discussed. Multilayer mirror stacks with broad high reflectivity stop-bands and peak reflectivities in excess of 99% at wavelengths near the emission energies of typical InGaN/GaN quantum well structures, have been patterned in order to be compatible with subsequent lateral epitaxial overgrowth or pendeoepitaxy. Improvements in material quality resulting from lateral overgrowth above single layer masks are demonstrated using spatially resolved photoluminescence and cathodoluminescence imaging.

  • Item type:Article
    ID code:24024
    Dates:
    Date
    Event
    January 2001
    Published
    Notes:Strathprints' policy is to record up to 8 authors per publication, plus any additional authors based at the University of Strathclyde. More authors may be listed on the official publication than appear in the Strathprints' record.
    Subjects:Science > Physics
    Department:Faculty of Science > Physics
    Faculty of Science > Physics > Institute of Photonics
    Depositing user: Strathprints Administrator
    Date deposited:02 Jul 2010 13:55
    Last modified:08 Apr 2024 18:05
    URI:https://strathprints.strath.ac.uk/id/eprint/24024
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