Picture of two heads

Open Access research that challenges the mind...

The Strathprints institutional repository is a digital archive of University of Strathclyde research outputs. Strathprints provides access to thousands of Open Access research papers by University of Strathclyde researchers, including those from the School of Psychological Sciences & Health - but also papers by researchers based within the Faculties of Science, Engineering, Humanities & Social Sciences, and from the Strathclyde Business School.

Discover more...

InGaN/GaN quantum well microcavities formed by laser lift-off and plasma etching

Edwards, P.R. and Martin, R.W. and Kim, H.S. and Kim, K.S. and Chen, Y. and Watson, I.M. and Sands, T. and Cheung, N.W. and Dawson, M.D. (2001) InGaN/GaN quantum well microcavities formed by laser lift-off and plasma etching. Physica Status Solidi B, 228 (1). pp. 91-94. ISSN 0370-1972

Full text not available in this repository. (Request a copy from the Strathclyde author)


Photoluminescence measurements have been used to investigate InGaN/GaN quantum well microcavities formed between two dielectric Bragg reflectors. Both single and ten-period quantum wells emitting near 420 nm were studied. The structures were formed using a combination of MOCVD growth for the nitride layers, laser lift-off to remove the sapphire substrates and electron-beam evaporation to deposit the mirrors. Room temperature photoluminescence measurements have been used to investigate the cavity modes observed from both plasma etched and unetched microcavities, and half widths as low as 0.6 meV were observed. The cavity modes were visible as dips in measured reflectance spectra and as peaks in the PL. Comparison of the mode wavelengths with simulated reflectivity spectra has allowed the determination of the cavity thickness before and after etching; this has shown the etch-back step to have a degree of control (±5%) necessary for the later fabrication of resonant periodic gain structures.