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Investigation of the unusual temperature dependence of ingan/gan quantum well photoluminescence over a range of emission energies

Pecharroman-Gallego, R. and Martin, R.W. and Watson, I.M. (2004) Investigation of the unusual temperature dependence of ingan/gan quantum well photoluminescence over a range of emission energies. Journal of Physics D: Applied Physics, 37 (21). pp. 2954-2961. ISSN 0022-3727

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Abstract

An analysis of photoluminescence (PL) spectra for a range of single and multiple InGaN/GaN quantum wells, as a function of temperature, is presented. The well-known anomalous 'S-shape' behaviour is observed for samples emitting over a very wide range of energies. We present an analysis of this range of data, supplemented by other published data, in terms of different types of recombination sites within the wells. A quantitative model, based on previous work, to fit the temperature dependence of the emission peak energy is developed and gives good fits over an extended temperature range. The fitting parameters obtained are discussed in the light of values obtained from the literature and the intense piezoelectric fields present in the samples. Furthermore, the linewidth dependence of the PL emission peak energy in the region of the 'S-shape' is also analysed.

Item type: Article
ID code: 22217
Keywords: carrier dynamics, room-temperature, band, luminescence, epilayers, shift, laser, dimensionality, recombination, localization, Physics, Surfaces, Coatings and Films, Acoustics and Ultrasonics, Electronic, Optical and Magnetic Materials, Condensed Matter Physics
Subjects: Science > Physics
Department: Faculty of Science > Physics
Unknown Department
Faculty of Science > Institute of Photonics
Related URLs:
    Depositing user: Strathprints Administrator
    Date Deposited: 14 Jul 2010 10:20
    Last modified: 05 Sep 2014 04:43
    URI: http://strathprints.strath.ac.uk/id/eprint/22217

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