Li, L. and Uttamchandani, D.G. (2009) Demonstration of a tunable RF MEMS bandpass filter using silicon foundry process. Journal of Electromagnetic Waves and Applications, 23 (2-3). pp. 405-413. ISSN 0920-5071Full text not available in this repository. (Request a copy from the Strathclyde author)
A novel tunable microwave filter with tuning range of 13.8 GHz to 18.2 GHz fabricated using a standard silicon foundry process based on lowresistivity silicon substrate is reported. The filter effect has been realized by integrating two interdigitated comb capacitors with a straight line inductor. The tuning effect has been achieved by varying the capacitance value of the capacitors with a bimorph MEMS actuator. The structure in whole, measuring 1.5 mm × 3.3 mm, allows 27.5% continuous tuning and insertion loss ranging from 3.4 to 6 dB. The driving voltage ranges from 0 V to 0.36 V.
|Keywords:||tunable microwave filter, silicon foundry process, silicon substrate, capacitator, Electrical engineering. Electronics Nuclear engineering, Physics and Astronomy(all), Electronic, Optical and Magnetic Materials, Electrical and Electronic Engineering|
|Subjects:||Technology > Electrical engineering. Electronics Nuclear engineering|
|Department:||Faculty of Engineering > Electronic and Electrical Engineering|
|Depositing user:||Strathprints Administrator|
|Date Deposited:||23 May 2010 13:58|
|Last modified:||22 Mar 2017 10:46|