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Demonstration of a tunable RF MEMS bandpass filter using silicon foundry process

Li, L. and Uttamchandani, D.G. (2009) Demonstration of a tunable RF MEMS bandpass filter using silicon foundry process. Journal of Electromagnetic Waves and Applications, 23 (2-3). pp. 405-413. ISSN 0920-5071

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Abstract

A novel tunable microwave filter with tuning range of 13.8 GHz to 18.2 GHz fabricated using a standard silicon foundry process based on lowresistivity silicon substrate is reported. The filter effect has been realized by integrating two interdigitated comb capacitors with a straight line inductor. The tuning effect has been achieved by varying the capacitance value of the capacitors with a bimorph MEMS actuator. The structure in whole, measuring 1.5 mm × 3.3 mm, allows 27.5% continuous tuning and insertion loss ranging from 3.4 to 6 dB. The driving voltage ranges from 0 V to 0.36 V.

Item type: Article
ID code: 19173
Keywords: tunable microwave filter, silicon foundry process, silicon substrate, capacitator, Electrical engineering. Electronics Nuclear engineering, Physics and Astronomy(all), Electronic, Optical and Magnetic Materials, Electrical and Electronic Engineering
Subjects: Technology > Electrical engineering. Electronics Nuclear engineering
Department: Faculty of Engineering > Electronic and Electrical Engineering
Related URLs:
    Depositing user: Strathprints Administrator
    Date Deposited: 23 May 2010 14:58
    Last modified: 05 Sep 2014 03:01
    URI: http://strathprints.strath.ac.uk/id/eprint/19173

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