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Correlating composition and luminescence in AlInGaN epilayers

Edwards, Paul and Martin, R.W. and Bejtka, K. and O'Donnell, K.P. and Fernandez-Garrido, S. and Calleja, E. (2009) Correlating composition and luminescence in AlInGaN epilayers. Superlattices and Microstructures, 45 (4-5). pp. 151-155.

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Epilayers of the quaternary alloy AlxInyGa1−x−yN have been grown on GaN/sapphire templates by plasma-assisted molecular beam epitaxy. The emission properties and elemental compositions of these samples were evaluated simultaneously and intercorrelated by combining hyperspectral cathodoluminescence imaging and wavelength-dispersive X-ray mapping. Use was made of inherent variations in growth temperature across a single epilayer to study the resultant effect on the different metal fractions and luminescence emission wavelength. By examining statistical correlations in this data, the interdependence of the fractions of constituent binary compounds, together with the associated changes in emission characteristics, can be clarified without the need to grow a systematic series of samples.

Item type: Article
ID code: 19166
Keywords: AlInGaN, GaN, MBE, cathodoluminescence, WDX, Physics, Materials Science(all), Electrical and Electronic Engineering, Condensed Matter Physics
Subjects: Science > Physics
Department: Faculty of Science > Physics
Depositing user: Strathprints Administrator
Date Deposited: 23 May 2010 12:36
Last modified: 21 May 2015 12:02

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