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Breakdown of anomalous channeling with ion energy for accurate strain determination in gan-based heterostructures

Redondo-Cubero, A. and Lorenz, K. and Gago, R. and Franco, N. and Fernandez-Garrido, S. and Smulders, P.J.M. and Munoz, E. and Watson, I.M. and , EU-FP6 (Funder) and , FCT, Portugal (Funder) and , MICINN, Spain (Funder) (2009) Breakdown of anomalous channeling with ion energy for accurate strain determination in gan-based heterostructures. Applied Physics Letters, 95 (5). ISSN 0003-6951

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    Abstract

    The influence of the beam energy on the determination of strain state with ion channeling in GaN-based heterostructures (HSs) is addressed. Experimental results show that anomalous channeling may hinder an accurate analysis due to the steering effects at the HS interface, which are more intense at lower ion energies. The experimental angular scans have been well reproduced by Monte Carlo simulations, correlating the steering effects with the close encounter probability at the interface. Consequently, limitations in the determination of the strain state by ion channeling can be overcome by selecting the adequate beam energy.

    Item type: Article
    ID code: 19024
    Notes: Strathprints' policy is to record up to 8 authors per publication, plus any additional authors based at the University of Strathclyde. More authors may be listed on the official publication than appear in the Strathprints' record.
    Keywords: channelling, gallium compounds, III-V semiconductors, internal stresses, ion beam effects, multilayers, wide band gap semiconductors, Science (General)
    Subjects: Science > Science (General)
    Department: Faculty of Science > Institute of Photonics
    Related URLs:
      Depositing user: Strathprints Administrator
      Date Deposited: 25 May 2010 10:31
      Last modified: 12 Mar 2012 17:55
      URI: http://strathprints.strath.ac.uk/id/eprint/19024

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