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1.3 micrometre GaInNAs monolithic vertical-cavity semiconductor optical amplifier

Calvez, S. and Clark, A.H. and Hopkins, J.M. and Macaluso, R. and Merlin, P. and Sun, H.D. and Dawson, M.D. and Jouhti, T. and , IEEE and , IEEE (2003) 1.3 micrometre GaInNAs monolithic vertical-cavity semiconductor optical amplifier. In: Indium Phosphide and Related Materials, 2003. International Conference on. IEEE, pp. 243-246. ISBN 0-7803-7704-4

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Abstract

We report development of a monolithically-grown GaInNAs/GaAs vertical amplifier for 1.3 μm operation. When optically-pumped using a 980 nm fibre-coupled diode, demonstration of up to 17.7 dB of on-chip gain has been realised. Amplification with 12.8 dB peak gain, 12 GHz bandwidth and saturation output power of -4.8 dBm is also reported.

Item type: Book Section
ID code: 18247
Notes: Strathprints' policy is to record up to 8 authors per publication, plus any additional authors based at the University of Strathclyde. More authors may be listed on the official publication than appear in the Strathprints' record.
Keywords: III-V semiconductors, gallium arsenide, indium compounds, optical pumping, semiconductor device measurement, surface emitting lasers, GaInNAs, GaInNAs monolithic vertical-cavity semiconductor optical amplifier, on-chip gain, optical-pumping, Optics. Light, Electrical engineering. Electronics Nuclear engineering
Subjects: Science > Physics > Optics. Light
Technology > Electrical engineering. Electronics Nuclear engineering
Department: Faculty of Science > Institute of Photonics
Unknown Department
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    Depositing user: Strathprints Administrator
    Date Deposited: 17 May 2010 12:46
    Last modified: 17 Jul 2013 13:29
    URI: http://strathprints.strath.ac.uk/id/eprint/18247

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