Hastie, J.E. and Jeon, C.W. and Burns, D. and Hopkins, J.M. and Calvez, S. and Abram, R.H. and Dawson, M.D. (2002) A 0.5w, 850nm alxga1-xasvecsel with intra-cavity silicon carbide heatspreader. In: Lasers and Electro-Optics Society, 2002. LEOS 2002. The 15th Annual Meeting of the IEEE. IEEE, pp. 329-330. ISBN 0-7803-7500-9
Full text not available in this repository. (Request a copy from the Strathclyde author)Abstract
A comparison of the wavelength shift of the vertical external-cavity surface-emitting laser (VECSEL) spectrum with increasing pump power reveals silicon carbide to be a far superior heat spreader material to previously used sapphire. We have demonstrated 0.5W with no rollover from a GaAs VECSEL by utilising an intra-cavity silicon carbide heat spreader. We believe that with increased pump power, the use of silicon carbide heat spreaders will provide a useful expedient to extend the available output power of VECSEL systems.
| Item type: | Book Section |
|---|---|
| ID code: | 18245 |
| Keywords: | III-V semiconductors, aluminium compounds, gallium arsenide, laser accessories, laser cavity resonators, laser transitions, optical pumping, quantum well lasers, surface emitting lasers, GaAs, SiC, VECSEL, available output power, heat spreader material, intra-cavity silicon carbide heat spreader, pump power silicon carbide, vertical external-cavity surface-emitting laser spectrum, wavelength shift, AlxGa1-xAs, Optics. Light |
| Subjects: | Science > Physics > Optics. Light |
| Department: | Faculty of Science > Institute of Photonics Faculty of Science > Physics |
| Related URLs: | |
| Depositing user: | Strathprints Administrator |
| Date Deposited: | 17 May 2010 16:41 |
| Last modified: | 04 Oct 2012 16:20 |
| URI: | http://strathprints.strath.ac.uk/id/eprint/18245 |
Actions (login required)
| View Item |