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A 0.5w, 850nm alxga1-xasvecsel with intra-cavity silicon carbide heatspreader

Hastie, J.E. and Jeon, C.W. and Burns, D. and Hopkins, J.M. and Calvez, S. and Abram, R.H. and Dawson, M.D. (2002) A 0.5w, 850nm alxga1-xasvecsel with intra-cavity silicon carbide heatspreader. In: Lasers and Electro-Optics Society, 2002. LEOS 2002. The 15th Annual Meeting of the IEEE. IEEE, pp. 329-330. ISBN 0-7803-7500-9

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Abstract

A comparison of the wavelength shift of the vertical external-cavity surface-emitting laser (VECSEL) spectrum with increasing pump power reveals silicon carbide to be a far superior heat spreader material to previously used sapphire. We have demonstrated 0.5W with no rollover from a GaAs VECSEL by utilising an intra-cavity silicon carbide heat spreader. We believe that with increased pump power, the use of silicon carbide heat spreaders will provide a useful expedient to extend the available output power of VECSEL systems.

Item type: Book Section
ID code: 18245
Keywords: III-V semiconductors, aluminium compounds, gallium arsenide, laser accessories, laser cavity resonators, laser transitions, optical pumping, quantum well lasers, surface emitting lasers, GaAs, SiC, VECSEL, available output power, heat spreader material, intra-cavity silicon carbide heat spreader, pump power silicon carbide, vertical external-cavity surface-emitting laser spectrum, wavelength shift, AlxGa1-xAs, Optics. Light
Subjects: Science > Physics > Optics. Light
Department: Faculty of Science > Institute of Photonics
Faculty of Science > Physics
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    Depositing user: Strathprints Administrator
    Date Deposited: 17 May 2010 16:41
    Last modified: 17 Jul 2013 13:29
    URI: http://strathprints.strath.ac.uk/id/eprint/18245

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