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A diamond-microchip gainnasvecsel operating at 1315nm

Smith, S.A. and Hopkins, J.M. and Hastie, J.E. and Calvez, S. and Kemp, A.J. and Burns, D. and Dawson, M.D. and , ieee (2004) A diamond-microchip gainnasvecsel operating at 1315nm. In: 2004 IEEE LEOS Annual Meeting Conference Proceedings. IEEE, pp. 330-331.

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Abstract

We present the first microchip vertical external-cavity surface-emitting semiconductor laser operating at 1.3 μm. Continuous-wave power >180 mW was achieved from a cavity volume ∼0.001 mm3 using a diode-pumped GaInNAs VECSEL structure capillary-bonded to a dielectric-mirror-coated diamond heatspreader.