Picture of smart phone in human hand

World leading smartphone and mobile technology research at Strathclyde...

The Strathprints institutional repository is a digital archive of University of Strathclyde's Open Access research outputs. Strathprints provides access to thousands of Open Access research papers by University of Strathclyde researchers, including by Strathclyde researchers from the Department of Computer & Information Sciences involved in researching exciting new applications for mobile and smartphone technology. But the transformative application of mobile technologies is also the focus of research within disciplines as diverse as Electronic & Electrical Engineering, Marketing, Human Resource Management and Biomedical Enginering, among others.

Explore Strathclyde's Open Access research on smartphone technology now...

Asymptotic solutions for an electrically induced Freedericksz transition in a wedge of smectic C liquid crystal

Smith, A.A.T. and Stewart, I.W. (2006) Asymptotic solutions for an electrically induced Freedericksz transition in a wedge of smectic C liquid crystal. Journal of Physics A: Mathematical and Theoretical, 39 (37). pp. 11361-11382. ISSN 0305-4470

Full text not available in this repository. (Request a copy from the Strathclyde author)

Abstract

Theoretical work based on the Freedericksz transition in a wedge of smectic C liquid crystal is presented. Continuum theory is employed in order to mathematically model the two-way interaction between the anisotropic fluid and an applied electric field. Asymptotic methods are used to obtain concise and informative explicit solutions for limiting regimes where (a) the applied voltage is just above threshold, and (b) a high voltage is applied. As is anticipated, in the case of a small dielectric anisotropy, the solution reduces to that obtained when the two-way interaction is neglected. Nevertheless, at voltages close to threshold, this interaction can have a significant effect upon the director profile. Realistic material, geometry and field parameters are adopted in order to display these solutions. By comparing them with those obtained using a numerical method, a high degree of accuracy can be found within the above regimes.