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InP/AlGaInP quantum dot semiconductor disk lasers for CW TEM00 emission at 716-755nm

Schlosser, Peter and Hastie, Jennifer and Calvez, Stephane and Krysa, Andrey and Dawson, Martin (2009) InP/AlGaInP quantum dot semiconductor disk lasers for CW TEM00 emission at 716-755nm. Optics Express, 17 (24). pp. 21782-21787. ISSN 1094-4087

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Multiple layers of InP QDs, self-assembled during epitaxial growth, were incorporated into the active region of an (AlxGa1-x)(0.51)In0.49P based semiconductor disk laser with monolithic AlxGa1-xAs distributed Bragg reflector. Three gain structure samples were selected from the epitaxial wafer, bonded to single-crystal diamond heatspreaders and optically pumped at 532nm within a high finesse external laser cavity. Laser emission with peak wavelengths at 716, 729, and 739 nm, respectively, was achieved from the three samples; the latter demonstrating tuning from 729 to 755 nm. Maximum continuous wave output power of 52mW at 739nm was achieved with 0.2% output coupling; the threshold and slope efficiency were 220 mW and 5.7% respectively.