Schlosser, Peter and Hastie, Jennifer and Calvez, Stephane and Krysa, Andrey and Dawson, Martin (2009) InP/AlGaInP quantum dot semiconductor disk lasers for CW TEM00 emission at 716-755nm. Optics Express, 17 (24). pp. 21782-21787. ISSN 1094-4087Full text not available in this repository. (Request a copy from the Strathclyde author)
Multiple layers of InP QDs, self-assembled during epitaxial growth, were incorporated into the active region of an (AlxGa1-x)(0.51)In0.49P based semiconductor disk laser with monolithic AlxGa1-xAs distributed Bragg reflector. Three gain structure samples were selected from the epitaxial wafer, bonded to single-crystal diamond heatspreaders and optically pumped at 532nm within a high finesse external laser cavity. Laser emission with peak wavelengths at 716, 729, and 739 nm, respectively, was achieved from the three samples; the latter demonstrating tuning from 729 to 755 nm. Maximum continuous wave output power of 52mW at 739nm was achieved with 0.2% output coupling; the threshold and slope efficiency were 220 mW and 5.7% respectively.
|Keywords:||quantum dot lasers , semiconductor disk laser, VECSEL, Physics, Atomic and Molecular Physics, and Optics|
|Subjects:||Science > Physics|
|Department:||Faculty of Science > Physics > Institute of Photonics|
|Depositing user:||Miss Sharon Kelly|
|Date Deposited:||22 Jun 2010 15:38|
|Last modified:||06 Jan 2017 07:59|