Massoubre, D. and McKendry, J. and Guilhabert, B.J.E. and Gong, Z. and Watson, I.M. and Gu, E. and Dawson, M.D. (2009) Fabrication of planar GaN-based micro-pixel light emitting diode arrays. IEEE Lasers and Electro-Optics Society Annual Meeting. pp. 84-85. ISSN 1092-8081Full text not available in this repository. (Request a copy from the Strathclyde author)
Micro-pixelated GaN light-emitting diodes (‘micro-LED’s) offer attractions for a wide range of applications including microdisplays, mask-free photolithography, lab-on-a-chip and bioinstrumentation . Mesa dry etching methods have underpinned the development of this technology to date. Here we propose and demonstrate a new planar process which simplifies the process flow and permits individually-addressable pixelated devices to be fabricated without any obvious degradation of electrical and optical performance. The approach is based on the intrinsic high resistivity of the p-type GaN layer for pixel to pixel electrical isolation and on a CHF3 plasma treatment to dramatically reduce current leakage through the p-GaN/metal interface. Consequently, this process requires a lower number of fabrication steps than previously used processes using mesa etching for pixel definition and dielectric deposition for electrical insulation . It leads to a planar active area well suited for further integration of functional micro-elements, including microfluidic-channels, microoptics or luminescent materials for colour conversion [3, 4]. This new fabrication route has been validated by fabricating and characterizing an individually addressable micro-stripe LED array emitting at 470 nm.
|Keywords:||diode arrays, microdisplays, mask-free photolithography, Physics, Electronic, Optical and Magnetic Materials, Electrical and Electronic Engineering|
|Subjects:||Science > Physics|
|Department:||Faculty of Science > Physics > Institute of Photonics|
|Depositing user:||Miss Sharon Kelly|
|Date Deposited:||01 Jun 2011 13:46|
|Last modified:||04 May 2016 13:42|