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Kinetic phase diagram for island nucleation and growth during homoepitaxy

Mulheran, P.A. and Basham, M. (2008) Kinetic phase diagram for island nucleation and growth during homoepitaxy. Physical Review B, 77 (7). 075427-075432. ISSN 1098-0121

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Abstract

The impact of small-island dissociation and mobility on island nucleation and growth during vapor deposition of thin films is analyzed using mean field rate equations. The dominant island nucleation and growth mechanism is mapped onto a temperature/deposition-rate kinetic phase diagram, using Cu(100) homoepitaxy as an example. The methodology provides analytical expressions for the boundaries on the diagram and encourages a deeper understanding of the growth mechanisms. A kinetic Monte Carlo simulation incorporating the small-island dynamics is also presented and used to test the kinetic phase diagram, and satisfactory agreement is found throughout.

Item type: Article
ID code: 15113
Keywords: kinetic phase diagram, island nucleation, growth, homoepitaxy, Solid state physics. Nanoscience, Electronic, Optical and Magnetic Materials, Condensed Matter Physics
Subjects: Science > Physics > Solid state physics. Nanoscience
Department: Faculty of Engineering > Chemical and Process Engineering
Unknown Department
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Depositing user: Dr Paul A Mulheran
Date Deposited: 22 Jan 2010 15:37
Last modified: 28 Mar 2014 05:10
URI: http://strathprints.strath.ac.uk/id/eprint/15113

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