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Optical energies of AllnN epilayers

Wang, K. and Martin, R. W. and Amabile, D. and Edwards, P. R. and Hernandez, S. and Nogales, E. and O'Donnell, K. P. and Lorenz, K. and Alves, E. and Matias, V. and Vantomme, A. and Wolverson, D. and Watson, I. M. (2008) Optical energies of AllnN epilayers. Journal of Applied Physics, 103 (7). ISSN 0021-8979

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    Abstract

    Optical energy gaps are measured for high-quality Al1−xInxN-on-GaN epilayers with a range of compositions around the lattice match point using photoluminescence and photoluminescence excitation spectroscopy. These data are combined with structural data to determine the compositional dependence of emission and absorption energies. The trend indicates a very large bowing parameter of 6 eV and differences with earlier reports are discussed. Very large Stokes' shifts of 0.4-0.8 eV are observed in the composition range 0.13<x<0.24, increasing approximately linearly with InN fraction despite the change of sign of the piezoelectric field

    Item type: Article
    ID code: 14005
    Keywords: aluminium compounds, indium compounds, photoluminescence, semiconductor epitaxial layers, Physics
    Subjects: Science > Physics
    Department: Faculty of Science > Physics
    Faculty of Science > Institute of Photonics
    Related URLs:
    Depositing user: Miss Sharon Kelly
    Date Deposited: 16 Dec 2009 09:33
    Last modified: 07 Mar 2014 15:19
    URI: http://strathprints.strath.ac.uk/id/eprint/14005

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