Individually-addressable flip-chip AllnGaN micropixelated light emitting diode arrays with high continuous and nanosecond output power

Zhang, H.Z. and Massoubre, D. and McKendry, J.J.D. and Gong, Z. and Guilhabert, B.J.E. and Griffin, C. and Gu, E. and Jessop, P.E. and Girkin, J.M. and Dawson, M.D. (2008) Individually-addressable flip-chip AllnGaN micropixelated light emitting diode arrays with high continuous and nanosecond output power. Optics Express, 16 (13). pp. 9918-9926. ISSN 1094-4087

Abstract

Micropixelated blue (470nm) and ultraviolet (370nm) AlInGaN light emitting diode arrays have been fabricated in flip-chip format with different pixel diameters (72μm and 30μm at, respectively, 100 and 278 pixels/mm2). Each micro-LED pixel can be individually-addressed and the devices possess a specially designed n-common contact incorporated to ensure uniform current injection and consequently uniform light emission across the array. The flip-chip micro-LEDs show, per pixel, high continuous output intensity of up to 0.55μW/μm2 (55W/cm2) at an injection current density of 10kA/cm2 and can sustain continuous injection current densities of up to 12kA/cm2 before breakdown. We also demonstrate that nanosecond pulsed output operation of these devices with per pixel onaxis average peak intensity up to 2.9μW/μm2 (corresponding to energy of 45pJ per 22ns optical pulse) can be achieved. We investigate the pertinent performance characteristics of these arrays for micro-projection applications, including the prospect of integrated optical pumping of organic semiconductor lasers.

Actions (login required)