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Photoluminescence and phonon satellites of single InGaN/GaN quantum wells with varying GaN cap thickness

Tan, L.T. and Martin, R.W. and O'Donnell, K.P. and Watson, I.M. (2006) Photoluminescence and phonon satellites of single InGaN/GaN quantum wells with varying GaN cap thickness. Applied Physics Letters, 89 (10). p. 101910. ISSN 0003-6951

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Abstract

Variations in thickness of the GaN caps above single InGaN quantum wells have been studied using photoluminescence spectroscopy. Data are presented from two series of samples designed to promote energy transfer to luminescent species on the surface. Improvements in the optical properties as the GaN cap thickness increases from 2.5 to 15 nm are accompanied by clear changes in the intensity of the LO-phonon satellites. Analysis of the strength of successive phonon satellites and the associated Huang-Rhys factors indicates that the amount of localization of the excitons is increased for the thinner cap samples. Surface depletion fields are also considered.

Item type: Article
ID code: 10021
Keywords: indium compounds , phonon-exciton interactions, photoluminescence, semiconductor quantum wells, III-V semiconductors, gallium compounds, Physics
Subjects: Science > Physics
Department: Faculty of Science > Physics
Faculty of Science > Institute of Photonics
Related URLs:
    Depositing user: Strathprints Administrator
    Date Deposited: 30 Jan 2012 14:01
    Last modified: 17 Aug 2012 15:40
    URI: http://strathprints.strath.ac.uk/id/eprint/10021

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