Hernandez, S. and Cusco, R. and Pastor, D. and Artus, L. and O'Donnell, K.P. and Martin, R.W. and Watson, I.M. and Nanishi, Y. and Calleja, E. (2005) Raman-scattering study of the InGaN alloy over the whole composition range. Journal of Applied Physics, 98. 013511-03515. ISSN 0021-8979
Abstract
We present Raman-scattering measurements on InxGa1−xN over the entire composition range of the alloy. The frequencies of the A1(LO) and E2 modes are reported and show a good agreement with the one-mode behavior dispersion predicted by the modified random-element isodisplacement model. The A1(LO) mode displays a high intensity relative to the E2 mode due to resonant enhancement. For above band-gap excitation, the A1(LO) peak displays frequency shifts as a function of the excitation energy due to selective excitation of regions with different In contents, and strong multiphonon scattering up to 3LO is observed in outgoing resonance conditions.
| Item type: | Article |
|---|
| ID code: | 10017 |
|---|
| Keywords: | indium compounds, phonon dispersion relations, phonon-phonon interactions, , spectral line shift, energy gap, Raman spectra, semiconductor epitaxial layers, gallium compounds, III-V semiconductors, wide band gap semiconductors , Physics |
|---|
| Subjects: | Science > Physics |
|---|
| Department: | Faculty of Science > Physics
Faculty of Science > Institute of Photonics |
|---|
| Related URLs: | |
|---|
| Depositing user: | Strathprints Administrator |
|---|
| Date Deposited: | 14 Nov 2011 14:14 |
|---|
| Last modified: | 06 Oct 2012 08:07 |
|---|
| URI: | http://strathprints.strath.ac.uk/id/eprint/10017 |
|---|
Actions (login required)
![[img]](http://strathprints.strath.ac.uk/style/images/fileicons/application_pdf.png)